Reactive Ion Etching

RIE-Image

Reactive ion etching (RIE) is a plasma etching process that adds a charge to the part being etched which induces a directional component to the etching process. This directionality of the etch enables significantly smaller etch feature sizes which is commonly used in the semiconductor industry.

Reactive Ion Etching Functional Principles

Reactive ion etching (RIE) is a plasma etching process that uses a charge to add a directional component to the etching process. This RIE process produces a charge on the part. When this part is charged the etching component of the plasma holds an opposite charge resulting in directional collision of the etch component on the part. The resulting etch is directional enabling much smaller feature size. RIE also enables manufacturers to etch at a faster rate than normal etching methods.

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Plasma Etching and Cleaning Strategy for Better Product Quality

Reactive Ion Etching Industries & Uses

  • Medical Device Industry: RIE is used to process materials with difficult etch properties.
  • Semiconductor Industry: RIE is applied in the manufacturing of integrated circuits
  • Sensor Industry: RIE allows for minimization of features and processing slow etching materials
  • Solar Industry: RIE facilitates the manufacturing of exotic materials difficult to process, or etch with standard methods

Popular Reactive Ion Etching Systems

{id=1, name='Femto', order=0}

Femto Version 6

Control Cabinet:
W 560 mm H 560 mm D 420 mm

Chamber:
Ø 3.9 in, L 10.9 in

Chamber Volume:
2

Gas Supply:
1 gas channel via needle valve

Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)

Control:
Semi-Automatic

{id=2, name='Pico', order=1}

Pico Version 7

Control Cabinet:
W 600 mm H 1700 mm D 800 mm

Chamber:
Ø 5.9 in, L 12.6 in

Chamber Volume:
5

Gas Supply:
Mass flow controllers

Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)

Control:
PC

{id=4, name='Tetra', order=3}

Tetra 100 PC

Control Cabinet:
W 600 mm H 1700 mm D 800 mm

Chamber:
W 15.8" x H 15.8" x D 24.6"

Chamber Volume:
100

Gas Supply:
Mass flow controllers

Generator:
1 pc. with 40 kHz
(optional: 13.56 MHz or 2.45 GHz)

Control:
PC

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